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powerelectronicsworld
11 小时
Indichip Semis to build $1.4b SiC fab
The proposed SiC fab will launch with a production capacity of 10,000 wafers per month, rising to 50,000 wafers per month ...
powerelectronicsworld
11 小时
Improving annealing conditions for GaN MOSFETs
Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...
powerelectronicsworld
5 天
Na‑flux method improves GaN device performance
The simultaneous growth of large quantities of GaN crystals achieved using the ammonothermal method can also reduce ...
powerelectronicsworld
6 天
US ITC says Innoscience infringed EPC GaN patent
Efficient Power Conversion (EPC) has announced the conclusion of the Presidential review period for the US International ...
powerelectronicsworld
6 天
Nexperia adds to energy harvesting range
Nexperia is expanding its energy harvesting portfolio with the NEH71x0 power management IC (PMIC) family, which eliminates ...
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